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Power Transistors
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2SC5121
Silicon NPN triple diffusion planar type
For general amplification
8.0+0.5 -0.1
Unit: mm
3.20.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 400 400 7 70 100 1.2 150 -55 to +150 Unit V V V mA mA W C C
1 2 3 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 1.760.1
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 100 A, IB = 0 IE = 1 A, IC = 0 VCB = 300 V, IE = 0 VCE = 380 V, IB = 0, Ta = 80C VCE = 10 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 50 80 4 8 30 Min 400 7 10 10 100 1.2 Typ Max Unit V V A A V MHz pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
16.01.0
* High collector-base voltage (Emitter open) VCBO * High collector-emitter voltage (Base open) VCEO * Small collector output capacitance (Common base, input open circuited) Cob * TO-126B package which requires no insulation plate for installation to the heat sink
3.80.3
11.00.5
Features
3.160.1
1.90.1
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
3.050.1
Publication date: February 2003
SJD00140BED
1
2SC5121
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PC Ta
2.4 Without heat sink
IC VCE
120
TC=25C
IC VBE
120
VCE=10V
Collector power dissipation PC (W)
2.0
100
100
1.6
Collector current IC (mA)
Collector current IC (mA)
80
IB=1.2mA 1.0mA 0.8mA 0.6mA
80
1.2
60
0.4mA
60
0.8
40
40
0.4
20
0.2mA
20
0 0 40 80 120 160
0
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
IC/IB=10
hFE IC
VCE=10V
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
12
IE=0 f=1MHz TC=25C
104
1
Forward current transfer ratio hFE
10
103
8
0.1
102
6
4
0.01
10
2
0.001 0.1
1
10
100
1 0.1
0
1
10
100
1
10
100
1 000
Collector current IC (mA)
Collector current IC (mA)
Collector-base voltage VCB (V)
2
SJD00140BED
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Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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